184PIN DDR400 Unbuffered DIMM

512MB With 32Mx8 CL2.5

ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Value Unit

Voltage on any pin relative to Vss VIN, VOUT -0.5 ~ 3.6 V

Voltage on VDD supply to Vss VDD, VDDQ -1.0 ~ 3.6 V

Storage temperature TSTG -55~+150

°C

Power dissipation PD 27 W

Short circuit current IOS 50 mA

Mean time between failure MTBF 50 year

Temperature Humidity Burning THB

85°C/85%, Static Stress °C-%

Temperature Cycling Test TC

0°C ~ 125°C Cycling °C

Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.

Functional operation should be restricted to recommended operating condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

DC OPERATING CONDITIONS

Recommended operating conditions (Voltage referenced to Vss = 0V, TA = 0 to 70°C)

Parameter Symbol Min Max Unit Note

Supply voltage VDD 2.5 2.7 V 5

I/O Supply voltage VDDQ 2.5 2.7 V 5

I/O Reference voltage VREF 0.49*VDDQ 0.51*VDDQ V 1

I/O Termination voltage VTT VREF-0.04 VREF+0.04 V 2

Input logic high voltage VIH(DC) VREF+0.15 VDDQ+0.3 V

Input logic low voltage VIL(DC) -0.3 VREF-0.15 V

Input Voltage Level, CK and /CK inputs VIN(DC) -0.3 VDDQ+0.3 V

Input Differential Voltage, CK and /CK inputs VID(DC) 0.36 VDDQ+0.6 V 3

V-I Matching: Pullup to Pulldown Current Ratio VI(Ratio) 0.71 1.4 4

Input leakage current II -2 2 uA

Output leakage current IOZ -5 5 uA

Output High Current (Normal strength driver)

VOUT= VTT + 0.84V

IOH -16.8 mA

Output Low Current (Normal strength driver)

VOUT= VTT – 0.84V

IOL 16.8 mA

Output High Current (Half strength driver)

VOUT= VTT + 0.45V

IOH -9 mA

Output High Current (Half strength driver)

VOUT= VTT - 0.45V

IOL 9 mA

Note: 1.VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of

same. Peak-to peak noise on VREF may not exceed +/-2% of the dc value.

2. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to

be set equal to VREF, and must track variations in the DC level of VREF

3. VID is the magnitude of the difference between the input level on CK and the input level on /CK.

4. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over

the entire temperature and voltage range, for device drain to source voltages from 0.25V to 1.0V. For a given

output, it represents the maximum difference between pullup and pulldown drivers due to process variation.

The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1/7 for

device drain to source voltages from 0.1 to 1.0.

5. This is the DC voltage supplied at the DRAM and is inclusive of all noise up to 20MHz. Any noise above 0MHz

at the DRAM generated from any source other than the DRAM itself may not exceed the DC voltage range of

2.6V +/-100mV.

Transcend Information Inc.

1 2 3 4 5 6 7 8 9 10 11 12

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