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200PIN DDR2 800 SO-DIMM

1Rank 1GB With 128Mx8 CL6

Transcend Information Inc.

Description

The TS128MSQ64V8U-I is a 128M x 64bits DDR2-800

1Rank SO-DIMM. The TS128MSQ64V8U-I consists of

8pcs 128Mx8bits DDR2 SDRAMs in FBGA packages and

a 2048 bits serial EEPROM on a 200-pin printed circuit

board. The TS128MSQ64V8U-I is a Dual In-Line Memory

Module and is intended for mounting into 200-pin edge

connector sockets.

Synchronous design allows precise cycle control with the

use of system clock. Data I/O transactions are possible

on both edges of DQS. Range of operation frequencies,

programmable latencies allow the same device to be

useful for a variety of high bandwidth, high performance

memory system applications.

Features

• Operating Temperature : -40°C to +85°C

• Gold plating of PCB gold finger is 30u

• RoHS compliant products.

• JEDEC standard 1.8V ± 0.1V Power supply

• VDDQ=1.8V ± 0.1V

• Max clock Freq: 400MHZ; 800Mb/s/Pin.

• Posted CAS

• Programmable CAS Latency: 4, 5, 6

• Programmable Additive Latency: 0, 1, 2, 3, 4, 5

• Write Latency (WL) = Read Latency (RL)-1

• Burst Length: 4, 8(Interleave/nibble sequential)

• Programmable sequential / Interleave Burst Mode

• Bi-directional Differential Data-Strobe (Single-ended

data-strobe is an optional feature)

• Off-Chip Driver (OCD) Impedance Adjustment

• MRS cycle with address key programs.

• On Die Termination

• Serial presence detect with EEPROM

Placement

PCB: 09-2301

1 2 3

Inhaltsverzeichnis

Seite 1

TTTSSS111222888MMMSSSQQQ666444VVV888UUU---III 200PIN DDR2 800 SO-DIMM 1Rank 1GB With 128Mx8 CL6 Transcend Information Inc. 1 Description The

Seite 2

TTTSSS111222888MMMSSSQQQ666444VVV888UUU---III 200PIN DDR2 800 SO-DIMM 1Rank 1GB With 128Mx8 CL6 Transcend Information Inc. 2 Dimensions Side

Seite 3

TTTSSS111222888MMMSSSQQQ666444VVV888UUU---III 200PIN DDR2 800 SO-DIMM 1Rank 1GB With 128Mx8 CL6 Transcend Information Inc. 3 Pinouts: Pin No

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