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200PIN DDR266 Unbuffered SO-DIMM

128MB With 16Mx16 CL2.5

Description

The TS16MSD64V6G is a 16M x 64bits Double Data

Rate SDRAM high-density for DDR266.The

TS16MSD64V6G consists of 4pcs CMOS 16Mx16 bits

Double Data Rate SDRAMs in 66 pin TSOP-II 400mil

packages, and a 2048 bits serial EEPROM on a 200-pin

printed circuit board. The TS16MSD64V6G is a Dual

In-Line Memory Module and is intended for mounting into

200-pin edge connector sockets.

Synchronous design allows precise cycle control with the

use of system clock. Data I/O transactions are possible

on both edges of DQS. Range of operation frequencies,

programmable latencies allow the same device to be

useful for a variety of high bandwidth, high performance

memory system applications.

Features

• Power supply: VDD: 2.5V ± 0.2V, VDDQ: 2.5V ±0.2V

• Max clock Freq: 133MHZ.

• Double-data-rate architecture; two data transfers per

clock cycle

• Differential clock inputs (CK and /CK)

• DLL aligns DQ and DQS transition with CK transition

• Auto and Self Refresh 7.8us refresh interval.

• Data I/O transactions on both edge of data strobe.

• Edge aligned data output, center aligned data input.

• Serial Presence Detect (SPD) with serial EEPROM

• SSTL-2 compatible inputs and outputs.

• MRS cycle with address key programs.

CAS Latency (Access from column address): 2.5

Burst Length (2,4,8 )

Data Sequence (Sequential & Interleave)

Placement

PCB: 09-1180

Transcend Information Inc.

1 2 3 4 5 6 ... 11 12

Inhaltsverzeichnis

Seite 1

TTTSSS111666MMMSSSDDD666444VVV666GGG 200PIN DDR266 Unbuffered SO-DIMM128MB With 16Mx16 CL2.5 Description The TS16MSD64V6G is a 16M x 64bits Double Da

Seite 2

TTTSSS111666MMMSSSDDD666444VVV666GGG 200PIN DDR266 Unbuffered SO-DIMM128MB With 16Mx16 CL2.5 SIMPLIFIED TRUTH TABLE (V=Valid, X=Don’t Care, H=Logic

Seite 3

TTTSSS111666MMMSSSDDD666444VVV666GGG 200PIN DDR266 Unbuffered SO-DIMM128MB With 16Mx16 CL2.5 Serial Presence Detect Specification Serial Presence Det

Seite 4 - Block Diagram

TTTSSS111666MMMSSSDDD666444VVV666GGG 200PIN DDR266 Unbuffered SO-DIMM128MB With 16Mx16 CL2.5 72 Manufacturing Location T 54 54 53 31 36 4D 5344 36

Seite 5

TTTSSS111666MMMSSSDDD666444VVV666GGG 200PIN DDR266 Unbuffered SO-DIMM128MB With 16Mx16 CL2.5 Dimensions Side Millimeters Inches A 67.60 ± 0.200 2

Seite 6 - for DQ,DQS and DM

TTTSSS111666MMMSSSDDD666444VVV666GGG 200PIN DDR266 Unbuffered SO-DIMM128MB With 16Mx16 CL2.5 Pinouts: Pin No Pin Name Pin No Pin Name Pin No Pin N

Seite 7 - Unit Note

TTTSSS111666MMMSSSDDD666444VVV666GGG 200PIN DDR266 Unbuffered SO-DIMM128MB With 16Mx16 CL2.5 Block Diagram A0~A12BA0,BA1DQ0~DQ15/RAS/CAS/WE/CSCKECK

Seite 8

TTTSSS111666MMMSSSDDD666444VVV666GGG 200PIN DDR266 Unbuffered SO-DIMM128MB With 16Mx16 CL2.5 ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit

Seite 9

TTTSSS111666MMMSSSDDD666444VVV666GGG 200PIN DDR266 Unbuffered SO-DIMM128MB With 16Mx16 CL2.5 DC CHARACTERISTICS (Recommended operating condition unle

Seite 10

TTTSSS111666MMMSSSDDD666444VVV666GGG 200PIN DDR266 Unbuffered SO-DIMM128MB With 16Mx16 CL2.5 AC OPERATING CONDITIONS Parameter Symbol Min Max Uni

Seite 11 - Transcend Information Inc

TTTSSS111666MMMSSSDDD666444VVV666GGG 200PIN DDR266 Unbuffered SO-DIMM128MB With 16Mx16 CL2.5 AC Timing Parameters & Specifications (These AC char

Seite 12

TTTSSS111666MMMSSSDDD666444VVV666GGG 200PIN DDR266 Unbuffered SO-DIMM128MB With 16Mx16 CL2.5 DQ & DM setup time to DQS tDS 0.5 ns DQ &

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