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64MB 72 PIN EDO

DRAM SIMM With 16Mx4 3.3VOLT

Description

The TS16MED3260V is a 16M by 32-bit dynamic

RAM module with 8pcs of 16Mx4 DRAMs

assembled on the printed circuit board.

The TS16MED3260V is optimized for application to

systems which require high density and large

capacity along with compact sizing.

Features

• 16,777,216 word by 32-bit organization.

• Fast Page Mode with Extended Data Out.

• Single +3.3V ± 10% power supply.

• 4,096 cycles refresh.

Transcend Information Inc.

• Lower power consumption.

• CAS before RAS refresh, RAS only refresh,

Hidden refresh, Fast Page Mode with EDO

Read_Modify_Write capability.

TS16MED3260V

Access Time from/RAS

tRAC

60ns

Access time from/CAS

tCAC

15ns

Random read/write cycle tome

tRC

104ns

Hyper page mode cycle time

tHPC

25ns

PRESENCE DETECT PINS (Optional)

Dimensions

Side Millimeters Inches

A 107.95 ± 0.400 4.250 ± 0.016

B 101.19 3.984

C 44.4500 1.750

D 6.3500 0.250

E 2.03 0.080

F 6.35000 0.250000

G 29.20 ± 0.20 1.150 ± 0.008

H 10.16 0.400

I 6.35 0.250

J 1.27 ± 0.10 0.050 ± 0.004

(Refer Placement)

Pin Identification

Symbol Function

A0~A11

System Address inputs

D0 ~ D31

Common data inputs/outputs

/RAS0, /RAS2

System Row address strobes

/CAS0~/CAS3

System column address strobes

/WE

System Write enable

Vss

Ground

VDD

+5 voltage power supply

No Connection

PD1~PD4

Presence detection pin

PIN 60NS

PD1

PD2

PD3

PD4

Vss

(Refer Block Diagram)

1 2 3 4 5 6 ... 17 18

Inhaltsverzeichnis

Seite 1

TTTSSS111666MMMEEEDDD333222666000VVV 64MB 72 PIN EDODRAM SIMM With 16Mx4 3.3VOLT Description The TS16MED3260V is a 16M by 32-bit dynamic RAM module

Seite 2 - Placement:

TTTSSS111666MMMEEEDDD333222666000VVV 64MB 72 PIN EDODRAM SIMM With 16Mx4 3.3VOLT Transcend Information Inc. 10

Seite 3 - Pinouts:

TTTSSS111666MMMEEEDDD333222666000VVV 64MB 72 PIN EDODRAM SIMM With 16Mx4 3.3VOLT Transcend Information Inc. 11

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TTTSSS111666MMMEEEDDD333222666000VVV 64MB 72 PIN EDODRAM SIMM With 16Mx4 3.3VOLT Transcend Information Inc. 12

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TTTSSS111666MMMEEEDDD333222666000VVV 64MB 72 PIN EDODRAM SIMM With 16Mx4 3.3VOLT Transcend Information Inc. 13

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TTTSSS111666MMMEEEDDD333222666000VVV 64MB 72 PIN EDODRAM SIMM With 16Mx4 3.3VOLT Transcend Information Inc. 14

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TTTSSS111666MMMEEEDDD333222666000VVV 64MB 72 PIN EDODRAM SIMM With 16Mx4 3.3VOLT Transcend Information Inc. 15

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TTTSSS111666MMMEEEDDD333222666000VVV 64MB 72 PIN EDODRAM SIMM With 16Mx4 3.3VOLT Transcend Information Inc. 16

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TTTSSS111666MMMEEEDDD333222666000VVV 64MB 72 PIN EDODRAM SIMM With 16Mx4 3.3VOLT Transcend Information Inc. 17

Seite 10 - DRAM SIMM With 16Mx4 3.3VOLT

TTTSSS111666MMMEEEDDD333222666000VVV 64MB 72 PIN EDODRAM SIMM With 16Mx4 3.3VOLT Transcend Information Inc. 18

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TTTSSS111666MMMEEEDDD333222666000VVV 64MB 72 PIN EDODRAM SIMM With 16Mx4 3.3VOLT Placement: IABFFEGHJCCD Transcend Information Inc. 2

Seite 12

TTTSSS111666MMMEEEDDD333222666000VVV 64MB 72 PIN EDODRAM SIMM With 16Mx4 3.3VOLT Pinouts: Pin No Pin Name Pin No Pin Name Pin No Pin NamePin No Pi

Seite 13

TTTSSS111666MMMEEEDDD333222666000VVV 64MB 72 PIN EDODRAM SIMM With 16Mx4 3.3VOLT TS16MED3260V-- Block Diagram A0~A11DQ0~DQ3/RAS/CAS/WE/OE16Mx4DRA

Seite 14

TTTSSS111666MMMEEEDDD333222666000VVV 64MB 72 PIN EDODRAM SIMM With 16Mx4 3.3VOLT ABSOLUTE MAXIMUM RATINGS* Item Symbol Rating Unit Voltage on any

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TTTSSS111666MMMEEEDDD333222666000VVV 64MB 72 PIN EDODRAM SIMM With 16Mx4 3.3VOLT DC AND OPERATION CHARACTERISTICS (Recommended operationg condition

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TTTSSS111666MMMEEEDDD333222666000VVV 64MB 72 PIN EDODRAM SIMM With 16Mx4 3.3VOLT CAPACITANCE (TA = 25°C, Vcc = 3.3V, f = 1MHz) Item Symbol Min M

Seite 17

TTTSSS111666MMMEEEDDD333222666000VVV 64MB 72 PIN EDODRAM SIMM With 16Mx4 3.3VOLT AC CHARACTERISTICS (0℃≦TA≦70℃, Vcc=3.3V±10%, See notes 1, 2) Test

Seite 18

TTTSSS111666MMMEEEDDD333222666000VVV 64MB 72 PIN EDODRAM SIMM With 16Mx4 3.3VOLT /RAS pulse width (Hyper page cycle) tRASP 60 200K ns /W to /RAS

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